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IRGPS60B120KD
IRGPS60B120KD
IGBT Chip IRGPS60B120KD
Infineon
IRGPS60B120KD
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5
Package Height20.3
Package Length15.6
Supplier PackageTO-274AA
Standard Package NameTO-274AA
Maximum Power Dissipation (mW)595000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)105
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Chip N-CH 1200V 105A 595000mW 3-Pin(3+Tab) TO-274AA Tube
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