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IRGS4715DTRRPBF
IRGS4715DTRRPBF
IGBT Chip IRGS4715DTRRPBF
Infineon
IRGS4715DTRRPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Supplier PackageD2PAK
Standard Package NameTO-263
Maximum Power Dissipation (mW)100000
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)21
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Chip N-CH 650V 21A 100000mW 3-Pin(2+Tab) D2PAK T/R
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