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IRGSL4640DPBF
IRGSL4640DPBF
IGBT Chip IRGSL4640DPBF
Infineon
IRGSL4640DPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)65
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 600V 65A 250000mW Tube
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