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NGB8202ANT4G
NGB8202ANT4G
IGBT Chip NGB8202ANT4G
onsemi
NGB8202ANT4G
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Diodes, Transistors and Thyristors
IGBT Chip
NGB8202ANT4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Supplier PackageD2PAK
Standard Package NameTO-263
Maximum Power Dissipation (mW)150000
Maximum Gate Emitter Voltage (V)±15
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)440
Maximum Continuous Collector Current (A)20
Maximum Gate Emitter Leakage Current (uA)350
Description
Trans IGBT Chip N-CH 440V 20A 150000mW 3-Pin(2+Tab) D2PAK T/R
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