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NGD8201NT4G
NGD8201NT4G
IGBT Chip NGD8201NT4G
onsemi
NGD8201NT4G
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Diodes, Transistors and Thyristors
IGBT Chip
NGD8201NT4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Supplier PackageDPAK
Maximum Power Dissipation (mW)125000
Maximum Gate Emitter Voltage (V)±15
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)440
Maximum Continuous Collector Current (A)20
Maximum Gate Emitter Leakage Current (uA)350
Description
Trans IGBT Chip N-CH 440V 20A 125000mW 3-Pin(2+Tab) DPAK T/R
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