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NGTD20T120F2WP
NGTD20T120F2WP
IGBT Chip NGTD20T120F2WP
onsemi
NGTD20T120F2WP
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWJAR
AutomotiveNo
TechnologyField Stop II|Trench
Part StatusActive
Channel TypeN
ConfigurationSingle
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.2
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Chip N-CH 1200V WJAR
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