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NGTD30T120F2WP
NGTD30T120F2WP
IGBT Chip NGTD30T120F2WP
onsemi
NGTD30T120F2WP
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWJAR
Pin Count3
AutomotiveNo
TechnologyField Stop II|Trench
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.74
Package Height0.1
Package Length6.24
Supplier PackageDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.2
Typical Collector Emitter Saturation Voltage (V)2.4
Description
Trans IGBT Chip N-CH 1200V 3-Pin Die WJAR
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