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SGB07N120ATMA1
SGB07N120ATMA1
IGBT Chip SGB07N120ATMA1
Infineon
SGB07N120ATMA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel TypeN
ConfigurationSingle
Package Width9.9
Package Height4.4
Package Length10.25
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)125
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)16.5
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)3.1
Description
Trans IGBT Chip N-CH 1200V 16.5A 125mW 3-Pin(2+Tab) D2PAK T/R
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