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SGD02N120
SGD02N120
IGBT Chip SGD02N120
Infineon
SGD02N120
--
Diodes, Transistors and Thyristors
IGBT Chip
SGD02N120.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusLTB
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)62000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)6.2
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)3.1
Description
Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(2+Tab) DPAK T/R
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