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SGP6N60UFDTU
SGP6N60UFDTU
IGBT Chip SGP6N60UFDTU
onsemi
SGP6N60UFDTU
--
Diodes, Transistors and Thyristors
IGBT Chip
SGP6N60UFDTU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.1(Max)
Supplier PackageTO-220
Standard Package NameTO-220
Maximum Power Dissipation (mW)30000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)6
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.6
Description
Trans IGBT Chip N-CH 600V 6A 30000mW 3-Pin(3+Tab) TO-220 Rail
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