Welcome to BEAM! Tel: +86-553-5896615
Language: Help
SIGC100T60R3ZJ
SIGC100T60R3ZJ
IGBT Chip SIGC100T60R3ZJ
Infineon
SIGC100T60R3ZJ
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
ECCN (US)EAR99
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width9.73
Package Length10.39
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Chip N-CH 600V Die
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95479
Manufacturer: Microchip Technology
Inventory: 0
$0.69311
Manufacturer: Microchip Technology
Inventory: 4000
$2.4485
Manufacturer: STMicroelectronics
Inventory: 5880
$0.6722
Manufacturer: Texas Instruments
Inventory: 3000
$3.35661
Manufacturer: Texas Instruments
Inventory: 2500
$0.14385
Manufacturer: Texas Instruments
Inventory: 3000
$1.31549
Manufacturer: Texas Instruments
Inventory: 6000
$1.06088
Manufacturer: STMicroelectronics
Inventory: 1920
$3.50089
Manufacturer: ADI
Inventory: 0
$1.39906