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SIGC104T170R2CX1SA1
SIGC104T170R2CX1SA1
IGBT Chip SIGC104T170R2CX1SA1
Infineon
SIGC104T170R2CX1SA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
TechnologyNPT
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width10.12
Package Height0.28
Package Length10.18
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1700
Maximum Gate Emitter Leakage Current (uA)0.3
Typical Collector Emitter Saturation Voltage (V)2.6
Description
Trans IGBT Chip N-CH 1700V 3-Pin Die Wafer
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