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SIGC121T120R2CLX1SA5
SIGC121T120R2CLX1SA5
IGBT Chip SIGC121T120R2CLX1SA5
Infineon
SIGC121T120R2CLX1SA5
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
TechnologyNPT
PCB changed3
Part StatusNRND
Channel TypeN
ConfigurationSingle
Package Width11.08
Package Height0.18
Package Length11.08
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.48
Typical Collector Emitter Saturation Voltage (V)2.2
Description
Trans IGBT Chip N-CH 1200V 75A 3-Pin Die Wafer
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