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SIGC121T60NR2CX1SA2
SIGC121T60NR2CX1SA2
IGBT Chip SIGC121T60NR2CX1SA2
Infineon
SIGC121T60NR2CX1SA2
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width11
Package Height0.1
Package Length11
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.48
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Chip N-CH 600V 150A 3-Pin Die Wafer
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