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SIGC18T60SNCX1SA3
SIGC18T60SNCX1SA3
IGBT Chip SIGC18T60SNCX1SA3
Infineon
SIGC18T60SNCX1SA3
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.3
Package Height0.1
Package Length4.3
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Gate Emitter Leakage Current (uA)0.12
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Chip N-CH 600V 3-Pin Die Wafer
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