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SIGC223T120R2CLX1SA1
SIGC223T120R2CLX1SA1
IGBT Chip SIGC223T120R2CLX1SA1
Infineon
SIGC223T120R2CLX1SA1
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusNRND
Channel TypeN
ConfigurationSingle
Package Width14.4
Package Height0.18
Package Length15.5
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)2.2
Description
Trans IGBT Chip N-CH 1200V 3-Pin Die Wafer
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