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SIGC223T120R2CSX1SA3
SIGC223T120R2CSX1SA3
IGBT Chip SIGC223T120R2CSX1SA3
Infineon
SIGC223T120R2CSX1SA3
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
AutomotiveNo
Part StatusNRND
Channel TypeN
ConfigurationSingle
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Chip N-CH 1200V 150A Wafer
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