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SIGC28T65EX1SA1
SIGC28T65EX1SA1
IGBT Chip SIGC28T65EX1SA1
Infineon
SIGC28T65EX1SA1
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.2
Package Height0.07
Package Length6.57
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Gate Emitter Leakage Current (uA)0.15
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Chip N-CH 650V 3-Pin Die Wafer
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