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SIGC39T60S
SIGC39T60S
IGBT Chip SIGC39T60S
Infineon
SIGC39T60S
--
Diodes, Transistors and Thyristors
IGBT Chip
SIGC39T60S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Chip N-CH 600V Die
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