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IGBT Chip SIGC39T60SEX1SA1
Infineon
SIGC39T60SEX1SA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Chip N-CH 600V Wafer
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