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SIGC54T60R3EX1SA3
SIGC54T60R3EX1SA3
IGBT Chip SIGC54T60R3EX1SA3
Infineon
SIGC54T60R3EX1SA3
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.97
Package Height0.07
Package Length8.97
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Chip N-CH 600V 100A 3-Pin Die Wafer
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