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SIGC81T120R2CLX1SA2
SIGC81T120R2CLX1SA2
IGBT Chip SIGC81T120R2CLX1SA2
Infineon
SIGC81T120R2CLX1SA2
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
TechnologyNPT
PCB changed3
Part StatusLTB
Channel TypeN
ConfigurationSingle
Package Width8.98
Package Height0.18
Package Length9.08
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.3
Typical Collector Emitter Saturation Voltage (V)2.2
Description
Trans IGBT Chip N-CH 1200V 50A 3-Pin Die Wafer
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