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STGD3NB60SD
STGD3NB60SD
IGBT Chip STGD3NB60SD
STMicroelectronics
STGD3NB60SD
--
Diodes, Transistors and Thyristors
IGBT Chip
STGD3NB60SD.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)48000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)6
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.2
Description
Trans IGBT Chip N-CH 600V 6A 48000mW 3-Pin(2+Tab) DPAK
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