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STGD3NC120H-1
STGD3NC120H-1
IGBT Chip STGD3NC120H-1
STMicroelectronics
STGD3NC120H-1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width2.4(Max)
Package Height6.2(Max)
Package Length6.6(Max)
Supplier PackageIPAK
Standard Package NameTO-251
Maximum Power Dissipation (mW)105000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)16
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.3
Description
Trans IGBT Chip N-CH 1200V 16A 105000mW 3-Pin(3+Tab) IPAK Tube
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