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STGFW30V60F
STGFW30V60F
IGBT Chip STGFW30V60F
STMicroelectronics
STGFW30V60F
--
Diodes, Transistors and Thyristors
IGBT Chip
STGFW30V60F.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5.7(Max)
Package Height26.7(Max)
Package Length15.7(Max)
Supplier PackageTO-3PF
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)58000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Chip N-CH 600V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube
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