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IGBT Chip STGO30H60DLLFBAG
STMicroelectronics
STGO30H60DLLFBAG
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveYes
Part StatusActive
Channel TypeN
ConfigurationSingle Seven Emitter
Supplier Temperature GradeAutomotive
Maximum Power Dissipation (mW)263
Maximum Gate Emitter Voltage (V)±10
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)250
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 600V 60A 263mW Automotive
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