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STGW30N120KD
STGW30N120KD
IGBT Chip STGW30N120KD
STMicroelectronics
STGW30N120KD
--
Diodes, Transistors and Thyristors
IGBT Chip
STGW30N120KD.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5.15(Max)
Package Height20.15(Max)
Package Length15.75(Max)
Supplier PackageTO-247
Standard Package NameTO-247
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)220000
Maximum Gate Emitter Voltage (V)±25
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.8
Description
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
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