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STGWT28IH125DF
STGWT28IH125DF
IGBT Chip STGWT28IH125DF
STMicroelectronics
STGWT28IH125DF
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
TechnologyTrench|Field Stop
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.7
Package Length15.8(Max)
Supplier PackageTO-3P
Standard Package NameTO-3P
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)375000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1250
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Chip N-CH 1250V 60A 375000mW 3-Pin(3+Tab) TO-3P Tube
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