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A1C15S12M3-F
A1C15S12M3-F
IGBT Modules A1C15S12M3-F
STMicroelectronics
A1C15S12M3-F
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Diodes, Transistors and Thyristors
IGBT Modules
A1C15S12M3-F.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count23
AutomotiveNo
TechnologyField Stop|Trench
PCB changed23
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageACEPACK-1
Maximum Power Dissipation (mW)142800
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)15
Maximum Gate Emitter Leakage Current (uA)0.5
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 1200V 15A 142800mW 23-Pin ACEPACK-1 Tray
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