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IGBT Modules APT75GN120JDQ3
Microchip Technology
APT75GN120JDQ3
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Screw |
| Technology | Field Stop|Trench |
| PCB changed | 4 |
| Part Status | Active |
| Channel Type | N |
| Configuration | Single Dual Emitter |
| Package Width | 25.4(Max) |
| Package Height | 9.6(Max) |
| Package Length | 38.2(Max) |
| Supplier Package | SOT-227 |
| Maximum Power Dissipation (mW) | 379 |
| Maximum Gate Emitter Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 124 |
| Maximum Gate Emitter Leakage Current (uA) | 0.6 |
| Typical Collector Emitter Saturation Voltage (V) | 1.7 |
| Description |
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