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APTGF25H120T1G
APTGF25H120T1G
IGBT Modules APTGF25H120T1G
Microchip Technology
APTGF25H120T1G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count12
AutomotiveNo
PCB changed12
Part StatusObsolete
Channel TypeN
ConfigurationQuad
Package Width40.8
Package Height11.5
Package Length51.6
Supplier PackageCase SP-1
Maximum Power Dissipation (mW)208
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)40
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 40A 208mW 12-Pin Case SP-1
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