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APTGT200DH120G
APTGT200DH120G
IGBT Modules APTGT200DH120G
Microchip Technology
APTGT200DH120G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width62
Package Height15
Package Length108
Supplier PackageCase SP-6
Maximum Power Dissipation (mW)890
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)280
Maximum Gate Emitter Leakage Current (uA)0.5
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 280A 890mW 8-Pin Case SP-6 Tube
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