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APTGT30SK170T1G
APTGT30SK170T1G
IGBT Modules APTGT30SK170T1G
Microchip Technology
APTGT30SK170T1G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count12
AutomotiveNo
PCB changed12
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width40.8
Package Height11.5
Package Length51.6
Supplier PackageCase SP-1
Maximum Power Dissipation (mW)210
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)45
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 45A 210mW 12-Pin Case SP-1
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