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APTGT400U120D4G
APTGT400U120D4G
IGBT Modules APTGT400U120D4G
Microchip Technology
APTGT400U120D4G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingBox
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width62
Package Height36
Package Length108
Supplier PackageCase D-4
Maximum Power Dissipation (mW)1785
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)650
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 650A 1785mW 4-Pin Case D-4 Box
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