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APTGT50TL60T3G
APTGT50TL60T3G
IGBT Modules APTGT50TL60T3G
Microchip Technology
APTGT50TL60T3G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count32
AutomotiveNo
PCB changed32
Part StatusActive
Channel TypeN
ConfigurationQuad
Package Width40.8
Package Height11.5
Package Length73.4
Supplier PackageCase SP-3
Maximum Power Dissipation (mW)176
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Module N-CH 600V 80A 176mW 32-Pin Case SP-3 Tube
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