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APTGT75DA60T1G
APTGT75DA60T1G
IGBT Modules APTGT75DA60T1G
Microchip Technology
APTGT75DA60T1G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count12
AutomotiveNo
PCB changed12
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width40.8
Package Height11.5
Package Length51.6
Supplier PackageCase SP-1
Maximum Power Dissipation (mW)250
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Module N-CH 600V 100A 250mW 12-Pin Case SP-1 Tube
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