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BSM150GB120DLCHOSA1
BSM150GB120DLCHOSA1
IGBT Modules BSM150GB120DLCHOSA1
Infineon
BSM150GB120DLCHOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusUnconfirmed
Channel TypeN
ConfigurationDual
Package Width61.4
Package Height30.9
Package Length106.4
Supplier Package62MM-1
Maximum Power Dissipation (mW)1250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)300
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.1
Description
Trans IGBT Module N-CH 1200V 300A 1250000mW 7-Pin 62MM-1 Tray
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