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IGBT Modules BSM300GA170DN2
Infineon
BSM300GA170DN2
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width61.4
Package Height36.5
Package Length106.4
Supplier Package62MM-2
Standard Package Name62MM
Maximum Power Dissipation (mW)2500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)440
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 1700V 440A 2500000mW 4-Pin 62MM-2
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