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BSM30GP60BOSA1
BSM30GP60BOSA1
IGBT Modules BSM30GP60BOSA1
Infineon
BSM30GP60BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
Pin Count24
PCB changed24
Part StatusObsolete
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-5
Maximum Power Dissipation (mW)180000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.3
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 600V 50A 180000mW 24-Pin ECONO2-5
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