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BSM50GB120DLCHOSA1
BSM50GB120DLCHOSA1
IGBT Modules BSM50GB120DLCHOSA1
Infineon
BSM50GB120DLCHOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
ECCN (US)EAR99
Part StatusObsolete
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)460000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)115
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.1
Description
Trans IGBT Module N-CH 1200V 115A 460000mW
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