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BSM75GAL120DN2HOSA1
BSM75GAL120DN2HOSA1
IGBT Modules BSM75GAL120DN2HOSA1
Infineon
BSM75GAL120DN2HOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
MountingScrew
ECCN (US)EAR99
Pin Count5
PCB changed5
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width34
Package Height30.5
Package Length94
Supplier Package34MM-1
Maximum Power Dissipation (mW)625
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)105
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 1200V 105A 625mW 5-Pin 34MM-1
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