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DF200R12W1H3B27BOMA1
DF200R12W1H3B27BOMA1
IGBT Modules DF200R12W1H3B27BOMA1
Infineon
DF200R12W1H3B27BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count11
AutomotiveNo
PCB changed11
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEASY1B-2
Standard Package NameAG-EASY1B-2
Maximum Power Dissipation (mW)375000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 1200V 50A 375000mW 11-Pin EASY1B-2 Tray
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