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DF600R12IP4DBOSA1
DF600R12IP4DBOSA1
IGBT Modules DF600R12IP4DBOSA1
Infineon
DF600R12IP4DBOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveUnknown
Part StatusActive
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)3350000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 600A 3350000mW Automotive Tray
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