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F1225R12KT4GBOSA1
F1225R12KT4GBOSA1
IGBT Modules F1225R12KT4GBOSA1
Infineon
F1225R12KT4GBOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count38
AutomotiveNo
PCB changed38
Part StatusActive
Channel TypeN
ConfigurationArray 12
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-4
Maximum Power Dissipation (mW)160000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)25
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 25A 160000mW 38-Pin ECONO3-4 Tray
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