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F3L75R12W1H3B27BOMA1
F3L75R12W1H3B27BOMA1
IGBT Modules F3L75R12W1H3B27BOMA1
Infineon
F3L75R12W1H3B27BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count22
AutomotiveNo
PCB changed22
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEASY1B-2
Maximum Power Dissipation (mW)275000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)45
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Module N-CH 1200V 45A 275000mW 22-Pin EASY1B-2 Tray
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