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FD250R65KE3KNOSA1
FD250R65KE3KNOSA1
IGBT Modules FD250R65KE3KNOSA1
Infineon
FD250R65KE3KNOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveUnknown
PCB changed7
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width130
Package Height48
Package Length140
Supplier PackageIHV130-6
Maximum Power Dissipation (mW)1000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-50
Maximum Collector-Emitter Voltage (V)6500
Maximum Continuous Collector Current (A)250
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3
Description
Trans IGBT Module N-CH 6500V 250A 1000000mW Automotive 7-Pin IHV130-6 Tray
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