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IGBT Modules FD800R17KF6CB2NOSA1
Infineon
FD800R17KF6CB2NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width130
Package Height38
Package Length140
Supplier PackageIHM130-1
Maximum Power Dissipation (mW)6250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1300
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.6
Description
Trans IGBT Module N-CH 1700V 1.3KA 6250000mW 7-Pin IHM130-1
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