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FF200R12KT4HOSA1
FF200R12KT4HOSA1
IGBT Modules FF200R12KT4HOSA1
Infineon
FF200R12KT4HOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveUnknown
PCB changed7
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width61.4
Package Height29
Package Length106.4
Supplier Package62MM-1
Maximum Power Dissipation (mW)1100000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)320
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 320A 1100000mW Automotive 7-Pin 62MM-1 Tray
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