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FF200R17KE4
FF200R17KE4
IGBT Modules FF200R17KE4
Infineon
FF200R17KE4
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Diodes, Transistors and Thyristors
IGBT Modules
FF200R17KE4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusUnconfirmed
Channel TypeN
ConfigurationDual
Package Width61.4
Package Height30.5
Package Length106.4
Supplier Package62MM-1
Maximum Power Dissipation (mW)1250
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)310
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 1700V 310A 1250000mW 7-Pin 62MM-1 Tray
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