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FP100R12KT4PBPSA1
FP100R12KT4PBPSA1
IGBT Modules FP100R12KT4PBPSA1
Infineon
FP100R12KT4PBPSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
MountingScrew
ECCN (US)EAR99
Pin Count35
AutomotiveNo
PCB changed35
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width62
Package Height17
Package Length122
Maximum Power Dissipation (mW)515
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 100A 515000mW 35-Pin
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